SSM6N04FU high speed switch applications with built-in gate-source resistor: r gs = 1 m ? (typ.) 2.5 v gate drive low gate threshold voltage: v th = 0.7~1.3 v small package maximum ratings (ta 25c) (q1, q2 common) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 10 v dc drain current i d 100 ma drain power dissipation p d (note) 200 mw channel temperature t ch 150 c storage temperature range t stg 55~150 c note: total rating marking pin assignment (top view) (q1, q2 common) equivalent circuit unit: mm weight: 6.8 mg (typ.) product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta 25c) (q1, q2 common) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 10 v, v ds 0 15 a drain-source breakdown voltage v (br) dss i d 100 a, v gs 0 20 v drain cut-off current i dss v ds 20 v, v gs 0 1 a gate threshold voltage v th v ds 3 v, i d 0.1 ma 0.7 1.3 v forward transfer admittance y fs v ds 3 v, i d 10 ma 25 50 ms drain-source on resistance r ds (on) i d 10 ma, v gs 2.5 v 4 12 input capacitance c iss v ds 3 v, v gs 0, f 1 mhz 11.0 pf reverse transfer capacitance c rss v ds 3 v, v gs 0, f 1 mhz 3.3 pf output capacitance c oss v ds 3 v, v gs 0, f 1 mhz 9.3 pf turn-on time t on v dd 3 v, i d 10 ma, v gs 0~2.5 v 0.16 switching time turn-off time t off v dd 3 v, i d 10 ma, v gs 0~2.5 v 0.19 s gate-source resistor r gs v gs 0~10 v 0.7 1.0 1.3 m switching time test circuit (a) test circuit (b) v in v gs (c) v out v ds SSM6N04FU product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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